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THE FEATURES OF THE INTERACTION OF MICROPARTICLES
WITH RECTANGULAR AND TRAPEZOIDAL POTENTIAL BARRIER
Alexey Ð. Zhilinsky, Moscow Technical University of Communication and Informatics, Moscow, Russia, zhilinsk@yandex.ru
Vladimir F. Degtyarev, Moscow Technical University of Communication and Informatics, Moscow, Russia, vfsteel2008@gmail.com
Abstract
The paper discusses the features of the interaction of microparticles with a rectangular and trapezoidal potential barrier with a height of U0. The dependences of the barrier transparency on the particle energy and characteristics of the barrier are studied. For a rectangular barrier, a generalized system of parameters (relative energy and area) was introduced, which made it possible to obtain new, more general results. For a rectangular barrier, the dependence of the quality factor of the resonant peak on its serial number and on the particle energy is determined. Analytically, the dependence of the height of the peaks on the relative energy of the particles is obtained. The main differences between the interaction of particles with a trapezoidal barrier compared to a rectangular one are considered. It is established that the transparency of the trapezoidal barrier is less than the transparency of a rectangular barrier of the same area, while the height of the resonant peaks and their Q-factor is less. The dependence of the wave functions on the ratio of the particle energy to the barrier height and on the effective barrier area is investigated. Model representations are proposed to explain these differences. These representations are based on the different efficiency of reflection by potential walls of different heights. From the considered model it follows that for a trapezoidal barrier, the amplitude of the reflected wave for any energy values does not vanish. This leads to a decrease in the height of the resonant peaks. The triangular barrier, for example, has no transparency resonance peaks at all. The ability to control the barrier transparency by applying a constant voltage to it is shown. Developed concepts can be used in nanoelectronics when developing new devices based on quantum tunnel effects.
Keywords: quantum mechanics, quantum barrier, wave function, transparency, nanoelectronics, tunneling.
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Information about authors:
Alexey P. Zhilinsky, Professor, PhD, Moscow Technical University of Communication and Informatics, Department of Physics, Moscow, Russia
Vladimir F. Degtyarev, associate professor, Ph.D., Moscow Technical University of Communication and Informatics, Department of Physics, Moscow, Russia