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THE STUDY OF TWO CIRCUITS OF AMPLIFIERS WITH DISTRIBUTED AMPLIFICATION ON FIELD-EFFECT TRANSISTORS
Nikita D. Shmakov, Moscow Technical University of Communication and Informatics, Moscow, Russia, shmaki-shmak@yandex.ru
Roman Yu. Ivanyushkin, Moscow Technical University of Communication and Informatics, Moscow, Russia, rivanyushkin@gmail.com
Abstract
The main applications, advantages and disadvantages of distributed amplifiers on the field-effect transistors are considered. The advantages of using the method of calculating amplifiers with distributed amplification based on the construction of input and output artificial long lines of the DA based on 3rd order of LFP-links are discussed. The features of building a special diplexer are discussed.
A simulated circuit of the DA on field-effect transistors BLF 278 is given, as well as the simulation results: the dependence of the useful power at the output of the VRU on the frequency, amplitude and phase-amplitude characteristics for an amplifier with a distributed amplification of the VHF range. The feedthrough and output characteristics of the MRF9045 field-effect transistor in the AWR software environment are investigated. The simulation results of artificial long lines based on 3rd order of LFP-links for constructing the DA for UHF band are given. A computer model of an ultra-wideband DA on field-effect transistors of the type MRF9045 is presented, and its amplitude-frequency, amplitude, and phase-amplitude characteristics are also given.
Keywords: distributed amplifier, field-effect transistors, artificial long lines, diplexer, wide-band amplifiers, energy characteristics.
References
1. The official site of Advanced Semiconductors. «Datasheet BLF278». Available at: http://www.advancedsemiconductor.com/transistors/BLF/BLF278.shtml (Accessed 20 March 2018)
2. The official site of NXP. «Datasheet MRF9045». Available at: https://www.nxp.com/docs/en/datasheet/MRF9045.pdf?fsrch=1&sr= 1&pageNum=1 (Accessed 17 July 2018)
3. Alekseev O.V. (1968). Usiliteli moschnosti s raspredelennim usileniem [Power amplifiers with distributed amplification], Energiya, Leningrad, Russia.
4. Shahgildyan V.V. and Shumilin M.C. and Kozyirev V.B. (2000). Proektirovanie radioperedatchikov [Design of radio transmitters], 4ed., Radio I svyaz, Moscow, Russia.
5. Nikita D. Shmakov, Roman Yu. Ivanyushkin. (2017). Research of solid-state amplifiers of traveling wave of the VHF band using two approaches of their calculation. IEEE Conference Publication: 2017 Systems of Signal Synchronization, Generating and Processing in Telecommunication (SYNCHROINFO).
6. Shmakov N.D., Ivanyushkin R.Y. (2017). Computer simulation of a VHF DA built on 3rd-order LPF links. Perspektivnyie tehnologii v sredstvah peredachi informatsii, vol.3, pp. 80-83.
7. Shmakov N.D., Ivanyushkin R.Y. (2017). The simulating of distributed amplifier on the field-effect transistor BLF278 for HF and VHF bands. T-Comm, no.11, pp. 34-41.
8. Shmakov N.D. and Ivanyushkin R.Y. (2017). The use of distributed amplification technology in the construction of wide-band and ultra-wide-range RF power amplifiers. Telekommunikatsii i informatsionnyie tehnologii, vol.4, no. 2, pp. 46-50.
Information about authors:
Nikita D. Shmakov, post-graduate student, Moscow Technical University of Communication and Informatics, Moscow, Russia
Roman Yu. Ivanyushkin, Candidate of Engineering Sciences (Ph.D), associate professor, Moscow Technical University of Communication and Informatics, Moscow, Russia